Type Designator: STC401
Material of Transistor: Si
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Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO-92
STC401 Transistor Equivalent Substitute - Cross-Reference Search
STC401 Datasheet (PDF)
1.1. stc401d.pdf Size:374K _auk
STC401D NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • Low saturation : VCE(SAT)=0.4V Max. • High Voltage : VCEO=60V Min. TO-252 Ordering Information Type NO. Marking Package Code STC401D STC401? TO-252 ? : Year & Week Code Absolute maximum ratings Characteristic Symbol Ratings Unit C
1.2. stc401.pdf Size:230K _auk
STC401 NPN Silicon Transistor Features PIN Connection • Low saturation switching application C • Voltage regulator application • Low saturation : VCE(SAT)=0.4V Max. • High Voltage : VCEO=60V Min. B E TO-92 Ordering Information Type NO. Marking Package Code STC401 STC401 TO-92 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base volta
1.3. stc401q.pdf Size:295K _auk
STC401Q NPN Silicon Transistor Features PIN Connection ? Low saturation switching application ? Voltage regulator application ? Low saturation : VCE(SAT)=0.4V Max. ? High Voltage : VCEO=60V Min. SOT-223 Ordering Information Type NO. Marking Package Code STC401 STC401Q SOT-223 YWW STC401: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute maximum ratings
1.4. stc401f.pdf Size:287K _auk
STC401F NPN Silicon Transistor PIN Connection Descriptions ? General purpose amplifier ? High voltage application Features ? Low saturation switching application ? Voltage regulator application ? Low saturation: VCE(sat)= 0.4V typ SOT-89 ? High voltage : VCEO=60V Min Ordering Information Type No. Marking Package Code C401 STC401F SOT-89 YWW C401: DEVICE CODE, YWW(Y
1.5. stc401l.pdf Size:272K _auk
STC401L NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • Low saturation : VCE(SAT)=0.4V Max. • High Voltage : VCEO=60V Min. Ordering Information Type NO. Marking Package Code 1: Emitter 2 :Collector 3: Base STC401L STC401L TO-92L Absolute maximum ratings Characteristic Symbol Ratings Unit C
Datasheet: FMMTL619, FZT1049A, FZT1051A, FZT1151A, FZT489, FZT491A, FZT589, FZT591A, 9014, MMBT2222AT, MMBT3904LP, MMBT3904T, MMBT3906LP, MMBT3906T, MMBT4401T, MMBT4403T, MMDT2222A.
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Type Designator: 2N5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
2N5551 Transistor Equivalent Substitute - Cross-Reference Search
2N5551 Datasheet (PDF)
1.1. 2n5551dcsm.pdf Size:10K _upd
2N5551DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.
1.2. 2n5551g.pdf Size:189K _upd
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-
1.3. 2n5551cn.pdf Size:249K _upd
2N5551CN Semiconductor Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92N Outline Dimensions unit : mm 4.20
1.4. 2n5551n.pdf Size:249K _upd
2N5551N Semiconductor Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9
1.5. 2n5551hr.pdf Size:428K _upd
2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 BVCEO 160 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 5 V - 10 mA > 80 TO-18 LCC-3 3 • Hermetic packages 4 • ESCC and JANS qualified 1 • Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5551HR is a silicon planar NPN transistor spe
1.6. 2n5551k.pdf Size:550K _upd
Typical Characterisitics 2N5551K hFE —— IC Static Characteristic 50 1000 COMMON EMITTER 300uA Ta=25℃ 270uA 40 Ta=100℃ 240uA 210uA 30 180uA 100 Ta=25℃ 150uA 20 120uA 90uA 10 60uA COMMON EMITTER IB=30uA VCE=5V 0 10 02468 110 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCEsat —— IC VBEsat —— IC 1000 2 1 Ta=25℃ Ta=10
1.7. 2n5551csm.pdf Size:31K _upd
2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 ± 0.10 (0.02 ± 0.004) 0.31 FEATURES rad. (0.012) • SILICON PLANAR EPITAXIAL NPN 3 TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 • CECC SCREENING OPTIONS 1.9
1.8. 2n5551sc.pdf Size:339K _upd
SEMICONDUCTOR 2N5551SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L FEATURES ·High Collector Breakdwon Voltage DIM MILLIMETERS _ + A 2.90 0.1 2 3 : VCBO=180V, VCEO=160V B 1.30+0.20/-0.15 C 1.30 MAX ·Low Leakage Current. 1 D 0.40+0.15/-0.05 : ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20 G 1.90 ·Low Saturatio
1.9. 2n5550 2n5551.pdf Size:188K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEB
1.10. 2n5550 2n5551 3.pdf Size:49K _philips
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 em
1.11. 2n5550 2n5551 2.pdf Size:53K _philips
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emi
1.12. 2n5551.pdf Size:216K _fairchild_semi
April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S
1.13. 2n5551 mmbt5551.pdf Size:171K _fairchild_semi
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S
1.14. 2n5551.pdf Size:53K _samsung
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V TO-92 • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction
1.15. 2n5550 2n5551.pdf Size:64K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
1.16. 2n5551 to-92.pdf Size:208K _mcc
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistor
1.17. 2n5550 2n5551.pdf Size:88K _onsemi
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current -
1.18. 2n5551.pdf Size:178K _utc
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * High collector-emitter voltage: VCEO=160V * High current gain ? APPLICATIONS * Telephone switching circuit * Amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT
1.19. 2n5551.pdf Size:217K _auk
2N5551 NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier C • High voltage application Features B • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : E VCE(sat)=0.5V(MAX.) TO-92 • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO
1.20. 2n5551.pdf Size:203K _secos
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of '-C' specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collecto
1.21. 2n5551.pdf Size:279K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -B
1.22. 2n5551c.pdf Size:32K _kec
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.),
1.23. 2n5551.pdf Size:32K _kec
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.),
1.24. 2n5551s.pdf Size:33K _kec
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=50nA(Max.) VCB=120V J 0.13+0.1
1.25. 2n5551.pdf Size:220K _lge
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VC
1.26. 2n5551.pdf Size:386K _wietron
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C
1.27. h2n5551.pdf Size:52K _hsmc
Spec. No. : HE6219 HI-SINCERITY Issued Date : 1992.09.21 Revised Date : 2004.12.28 MICROELECTRONICS CORP. Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings • Maximum Tempera
1.28. 2n5551.pdf Size:260K _can-sheng
TO-92 Plastic-Encapsulate Transistors TO-92 TO-92 TO-92 TO-92 TRANSISTOR (NPN) 2N5551 TRANSISTOR (NPN) TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES FEATURES FEATURES FEATURES � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage 1. EMlTTER �
1.29. 2n5551.pdf Size:136K _first_silicon
SEMICONDUCTOR 2N5551 TECHNICAL DATA 2N5551 TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Unit G 0.85 H 0.45 VCBO Collector-Base Voltage 180 V _ H J 14.00 0.50 + L 2.30 F F VCEO Collector-E
1.30. 2n5551.pdf Size:1058K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR( NPN ) TO-92 FEATURES ·Switching and amplification in high voltage Applications such as telephony 1. EMITTER · Low current(max. 600mA) 2. BASE · High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parame
Datasheet: 2N5538, 2N5539, 2N554, 2N5540, 2N5541, 2N5542, 2N555, 2N5550, MJE13005, 2N5552, 2N5552-1, 2N5552-2, 2N5552-4, 2N5559, 2N556, 2N5560, 2N557.
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